Wide-bandgap, lattice-mismatched window layer for a solar conversion device

US7119271B2 · kind B2 · utility

Assignee

• The Boeing Company · US

Inventors

• Richard R. King · Thousand Oaks, US
• Peter C. Colter · Santa Clarita, US
• James H. Ermer · Burbank, US
• Moran Haddad · Calabasas, US
• Nasser H. Karam · Tustin, US

Key dates

• Filing date: Jan 31, 2003
• Grant date: Oct 10, 2006
• Expiry date: Jan 14, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.