Flip-chip light emitting diode

US7119372B2 · kind B2 · utility

Assignee

• GELcore LLC · US

Inventors

• Edward Brittain Stokes · Niskayuna, US
• Mark P. D'Evelyn · Fremont, US
• Stanton Earl Weaver · Broadalbin, US
• Peter Micah Sandvik · Guilderland, US
• Abasifreke Ebong · Marietta, US
• Xian-An Cao · Clifton Park, US
• Steven Francis LeBoeuf · Raleigh, US
• Nikhil R. Taskar · Ossining, US

Key dates

• Filing date: Oct 24, 2003
• Grant date: Oct 10, 2006
• Expiry date: Oct 24, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872

Abstract

A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).