Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
US7119380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2004 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Dec 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/87
Abstract
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.