High-voltage transistor having shielding gate
US7119413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2004 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Feb 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.