Inventor · Yokohama, JP

Takeshi Kamigaichi

77Patents
12h-index
27Co-inventors
84Inventor score

Filing activity: Sep 21, 2001 → Apr 29, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8044448B2 Nonvolatile semiconductor memory device Electricity 215 Active
US8324680B2 Non-volatile semiconductor storage device with laminated vertical memory cell and select transistors Electricity 199 Active
US7800163B2 Non-volatile semiconductor storage device Electricity 180 Active
US7796439B2 Semiconductor memory device and write method thereof Physics 54 Active
US7855457B2 Stacked multilayer structure and manufacturing method thereof Emerging Cross-Sectional Technologies 32 Active
US7800091B2 Nonvolatile semiconductor memory device and manufacturing method thereof Electricity 29 Active
US7119413B2 High-voltage transistor having shielding gate Electricity 26 Expired
US6835978B2 Nonvolatile semiconductor memory device having element isolating region of trench type Electricity 22 Expired
US8026546B2 Nonvolatile semiconductor memory device and method of manufacturing the same Electricity 21 Active
US7244984B2 Nonvolatile semiconductor memory including two memory cell columns sharing a single bit line Electricity 18 Expired
US8711634B2 Nonvolatile semiconductor memory device and method for controlling the same Physics 16 Active
US7977733B2 Non-volatile semiconductor storage device Electricity 12 Active
US7049653B2 Nonvolatile semiconductor memory device having element isolating region of trench type Electricity 12 Expired
US8395922B2 Semiconductor memory device Physics 10 Active
US7902023B2 Method of manufacturing non-volatile semiconductor storage device Electricity 7 Active
US7939406B2 Nonvolatile semiconductor memory device having element isolating region of trench type Electricity 7 Active
US8314455B2 Non-volatile semiconductor storage device Electricity 7 Active
US7671475B2 Nonvolatile semiconductor memory having a word line bent towards a select gate line side Electricity 7 Active
US9640547B2 Stacked multilayer structure and manufacturing method thereof Emerging Cross-Sectional Technologies 7 Active
US7573092B2 Nonvolatile semiconductor memory device having element isolating region of trench type Electricity 7 Active
US7825439B2 Semiconductor memory Electricity 6 Active
US8237218B2 Nonvolatile semiconductor memory device and method of manufacturing the same Electricity 6 Active
US7352027B2 Nonvolatile semiconductor memory device having element isolating region of trench type Electricity 5 Active
US9257388B2 Stacked multilayer structure and manufacturing method thereof Emerging Cross-Sectional Technologies 5 Active
US6927449B2 Nonvolatile semiconductor memory device having element isolating region of trench type Electricity 5 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.