Magnetic cell and magnetic memory
US7120049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2006 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Apr 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.