Patent · US Expired

Semiconductor memory and method for operating a semiconductor memory

US7120074B2 · kind B2 · utility

2Cited by

8References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Proell · Dorfen, DE
Herbert Benzinger · Birkenfeld, DE
Manfred Dobler · Hersbruck, DE
Joerg Kliewer · Munich, DE

Key dates

Filing date	Aug 4, 2004
Grant date	Oct 10, 2006
Priority date	—
Expiry date	Dec 17, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/4068
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A semiconductor memory includes storage cells (2) that have storage capacitors and transistors with an electrode, which is electrically biasable with two different electrical potentials (V1, V2) in order to open and close the transistor. The electrode potential (V2) intended for the off state of the transistor is a temperature-dependent potential, the value of which is controlled temperature-dependently by the semiconductor memory (1) so that the second electrical potential (V2) becomes more different from the first electrical potential (V1) as the temperature (T) increases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.