Method to manufacture silicon quantum islands and single-electron devices
US7122413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Dec 19, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a method of manufacturing a single-electron transistor device (100). The method includes forming a thinned region (110) in a silicon substrate (105), the thinned region (110) offset by a non-selected region (115). The method also includes forming at least one quantum island (145) from the thinned region (110) by subjecting the thinned region (110) to an annealing process. The non-selected region (115) is aligned with the quantum island (145) and tunnel junctions (147) are formed between the quantum island (145) and the non-selected region (115). The present invention also includes a single-electron device (200), and a method of manufacturing an integrated circuit (300) that includes a single-electron device (305).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.