Olivier Faynot
7Patents
2h-index
11Co-inventors
44Inventor score
Filing activity: Dec 19, 2003 → Nov 6, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7198993B2 | Method of fabricating a combined fully-depleted silicon-on-insulator (FD-SOI) and partially-depleted silicon-on-insulator (PD-SOI) devices | Electricity | 4 | Expired |
| US7732282B2 | Transistor of the I-MOS type comprising two independent gates and method of using such a transistor | Electricity | 3 | Active |
| US7763915B2 | Three-dimensional integrated C-MOS circuit and method for producing same | Electricity | 2 | Active |
| US7939398B2 | Method to manufacture silicon quantum islands and single-electron devices | Emerging Cross-Sectional Technologies | 1 | Active |
| US8877618B2 | Method for producing a field effect transistor with a SiGe channel by ion implantation | Electricity | 0 | Active |
| US7579226B2 | Thin layer element and associated fabrication process | Electricity | 0 | Active |
| US7122413B2 | Method to manufacture silicon quantum islands and single-electron devices | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.