Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
US7122824B2 · kind B2 · utility
127Cited by
19References
29Claims
0Family size
Assignees
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Key dates
| Filing date | Jan 13, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Jan 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.