Trench-gate semiconductor devices
US7122860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Jul 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench-gate semiconductor device, for example a MOSFET or IGBT, includes a semiconductor body (20) having a drain region (4) comprising a drain drift region (4a) and a drain contact region (4b). An insulated field plate (24) is included in the trench (10) between the gate (8) and the drain contact region (4b), wherein the field plate (24) is for connection to a bias potential greater than the gate potential and near to the bulk breakdown voltage of the drain drift region (4a). The field plate (24) causes the potential drop across the drain drift region (4a) to be spread considerably more evenly, particularly at applied voltages greater than the bulk breakdown voltage, thereby substantially increasing the breakdown voltage of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.