Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations
US7122871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Mar 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Integrated circuit field effect transistors include an integrated circuit substrate and a fin that projects away from the integrated circuit substrate, extends along the integrated circuit substrate, and includes a top that is remote from the integrated circuit substrate. A channel region is provided in the fin that is doped a conductivity type and has a higher doping concentration of the conductivity type adjacent the top than remote from the top. A source region and a drain region are provided in the fin on opposite sides of the channel region, and an insulated gate electrode extends across the fin adjacent the channel region. Related fabrication methods also are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.