Patent · US Expired

1P1N 2T gain cell

US7123500B2 · kind B2 · utility

27Cited by
69References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 2003
Grant dateOct 17, 2006
Priority date—
Expiry dateDec 30, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/405
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A two-transistor DRAM cell includes an NMOS device and a PMOS device coupled to the NMOS device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.