Yibin Ye
84Patents
22h-index
32Co-inventors
88Inventor score
Filing activity: Dec 6, 1996 → Feb 5, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7061806B2 | Floating-body memory cell write | Physics | 134 | Expired |
| US6903984B1 | Floating-body DRAM using write word line for increased retention time | Electricity | 112 | Expired |
| US7230846B2 | Purge-based floating body memory | Physics | 102 | Expired |
| US6329874A | Method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode | Physics | 97 | Expired |
| US6724648B2 | SRAM array with dynamic voltage for reducing active leakage power | Physics | 81 | Expired |
| US7102951B2 | OTP antifuse cell and cell array | Physics | 61 | Expired |
| US6169419A | Method and apparatus for reducing standby leakage current using a transistor stack effect | Electricity | 55 | Expired |
| US7167397B2 | Apparatus and method for programming a memory array | Physics | 40 | Expired |
| US7391640B2 | 2-transistor floating-body dram | Electricity | 40 | Active |
| US6744301B1 | System using body-biased sleep transistors to reduce leakage power while minimizing performance penalties and noise | Physics | 38 | Expired |
| US7120804B2 | Method and apparatus for reducing power consumption through dynamic control of supply voltage and body bias including maintaining a substantially constant operating frequency | Emerging Cross-Sectional Technologies | 36 | Expired |
| US7246215B2 | Systolic memory arrays | Physics | 35 | Expired |
| US5838203A | Method and apparatus for generating waveforms using adiabatic circuitry | Electricity | 33 | Expired |
| US7558097B2 | Memory having bit line with resistor(s) between memory cells | Physics | 32 | Active |
| US6181608A | Dual Vt SRAM cell with bitline leakage control | Physics | 32 | Expired |
| US6519176B1 | Dual threshold SRAM cell for single-ended sensing | Physics | 30 | Expired |
| US7123500B2 | 1P1N 2T gain cell | Physics | 27 | Expired |
| US7403426B2 | Memory with dynamically adjustable supply | Physics | 27 | Expired |
| US7020041B2 | Method and apparatus to clamp SRAM supply voltage | Physics | 25 | Expired |
| US6191606A | Method and apparatus for reducing standby leakage current using input vector activation | Electricity | 25 | Expired |
| US6400206B2 | Dual-level voltage shifters for low leakage power | Electricity | 23 | Expired |
| US6486706B2 | Domino logic with low-threshold NMOS pull-up | Electricity | 23 | Expired |
| US7280425B2 | Dual gate oxide one time programmable (OTP) antifuse cell | Physics | 20 | Expired |
| US6801463B2 | Method and apparatus for leakage compensation with full Vcc pre-charge | Physics | 20 | Expired |
| US7307899B2 | Reducing power consumption in integrated circuits | Physics | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.