Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput
US7125583B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | May 23, 2002 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the production of dummy wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.