Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
US7125777B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Aug 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
Abstract
An asymmetric hetero-doped metal oxide (AH2MOS) semiconductor device includes a substrate and an insulated gate on the top of the substrate disposed between a source region and a drain region. On one side of the gate, heterodoped tub and source regions are formed. The tub region has dopants of a second polarity. A source region is disposed inside each tub region and has dopants of a first polarity opposite to the second polarity. On the other side of the gate, heterodoped buffer and drift regions are formed. The buffer regions comprise dopants of the second polarity. The drift regions are disposed inside the buffer regions and are doped with dopants of the first polarity. A drain n+ tap region is disposed in the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.