Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
US7126052B2 · kind B2 · utility
23Cited by
11References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2002 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jul 13, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.