Patent · US Expired

Method for enhancing the electric connection between a power electronic device and its package

US7126173B2 · kind B2 · utility

0Cited by

12References

33Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Ferruccio Frisina · Gravina di Catania, IT
Antonio Pinto · Charly, FR
Angelo Magri · Mascalucia, IT

Key dates

Filing date	Oct 30, 2002
Grant date	Oct 24, 2006
Priority date	—
Expiry date	Sep 23, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/252
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic power device of improved structure is fabricated with MOS technology to have a gate finger region and corresponding source regions on either sides of the gate region. This device has a first-level metal layer arranged to independently contact the gate region and source regions, and has a protective passivation layer arranged to cover the gate region. Advantageously, a wettable metal layer, deposited onto the passivation layer and the first-level metal layer, overlies said source regions. In this way, the additional wettable metal layer is made to act as a second-level metal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.