Angelo Magri
32Patents
4h-index
27Co-inventors
63Inventor score
Filing activity: Sep 18, 1997 → Apr 5, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5981343A | Single feature size mos technology power device | Electricity | 22 | Expired |
| US5985721A | Single feature size MOS technology power device | Electricity | 8 | Expired |
| US7205607B2 | Semiconductor power device with insulated gate and trench-gate structure and corresponding manufacturing method | Electricity | 5 | Expired |
| US8637369B2 | Method for manufacturing an integrated power device having gate structures within trenches | Electricity | 5 | Active |
| US7067363B2 | Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density | Electricity | 4 | Expired |
| US7842574B2 | Method of manufacturing a semiconductor power device | Electricity | 4 | Active |
| US7372142B2 | Vertical conduction power electronic device package and corresponding assembling method | Electricity | 4 | Expired |
| US7569883B2 | Switching-controlled power MOS electronic device | Electricity | 4 | Expired |
| US7875936B2 | Power MOS electronic device and corresponding realizing method | Electricity | 4 | Active |
| US8921211B2 | Vertical-conduction integrated electronic device and method for manufacturing thereof | Electricity | 4 | Active |
| US6468866B2 | Single feature size MOS technology power device | Electricity | 3 | Expired |
| US7560368B2 | Insulated gate planar integrated power device with co-integrated Schottky diode and process | Electricity | 3 | Active |
| US8664713B2 | Integrated power device on a semiconductor substrate having an improved trench gate structure | Electricity | 3 | Active |
| US7713853B2 | Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices | Electricity | 1 | Active |
| US7968412B2 | Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture | Electricity | 1 | Active |
| US8895370B2 | Vertical conduction power electronic device and corresponding realization method | Electricity | 1 | Active |
| US9070694B2 | Manufacturing of electronic devices in a wafer of semiconductor material having trenches with different directions | Electricity | 0 | Active |
| US7126173B2 | Method for enhancing the electric connection between a power electronic device and its package | Electricity | 0 | Expired |
| US9647061B2 | Electronic device of vertical MOS type with termination trenches having variable depth | Electricity | 0 | Active |
| US8420487B2 | Power MOS electronic device and corresponding realizing method | Electricity | 0 | Active |
| US8030192B2 | Process for manufacturing a large-scale integration MOS device and corresponding MOS device | Electricity | 0 | Active |
| US8624332B2 | Vertical conduction power electronic device and corresponding realization method | Electricity | 0 | Active |
| US9520468B2 | Integrated power device on a semiconductor substrate having an improved trench gate structure | Electricity | 0 | Active |
| US9142646B2 | Integrated electronic device with edge-termination structure and manufacturing method thereof | Electricity | 0 | Active |
| US8420525B2 | Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.