Metal-oxide-semiconductor device with enhanced source electrode

US7126193B2 · kind B2 · utility

Assignee

• Ciclon Semiconductor Device Corp. · US

Inventors

• Frank Baiocchi · Allentown, US
• Bailey Jones · Shillington, US
• Muhammed Ayman Shibib · Wyomissing, US
• Shuming Xu · Schnecksville, US

Key dates

• Filing date: Sep 29, 2003
• Grant date: Oct 24, 2006
• Expiry date: Dec 23, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

An MOS device is formed including a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. A gate is formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. The MOS device further includes at least one contact, the at least one contact including a silicide layer formed on and in electrical connection with at least a portion of the first source/drain region, the silicide layer extending laterally away from the gate. The contact further includes at least one insulating layer formed directly on the silicide layer.