Bailey Jones
11Patents
4h-index
18Co-inventors
49Inventor score
Filing activity: Aug 31, 2000 → Oct 30, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7126193B2 | Metal-oxide-semiconductor device with enhanced source electrode | Electricity | 21 | Expired |
| US6987052B2 | Method for making enhanced substrate contact for a semiconductor device | Electricity | 5 | Expired |
| US7339274B2 | Metallization performance in electronic devices | Electricity | 4 | Expired |
| US6790753B2 | Field plated schottky diode and method of fabrication therefor | Electricity | 4 | Expired |
| US6690037B1 | Field plated Schottky diode | Electricity | 2 | Expired |
| US7041561B2 | Enhanced substrate contact for a semiconductor device | Electricity | 2 | Expired |
| US6828649B2 | Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor | Electricity | 2 | Expired |
| US7329605B2 | Semiconductor structure formed using a sacrificial structure | Electricity | 1 | Expired |
| US7494888B2 | Device and method using isotopically enriched silicon | Electricity | 1 | Expired |
| US6737311B2 | Semiconductor device having a buried layer for reducing latchup and a method of manufacture therefor | Electricity | 1 | Expired |
| US7741702B2 | Semiconductor structure formed using a sacrificial structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.