Multilayer metal gate electrode
US7126199B2 · kind B2 · utility
132Cited by
10References
5Claims
0Family size
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Key dates
| Filing date | Sep 27, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Sep 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
Abstract
A complementary metal oxide semiconductor integrated circuit may be formed with NMOS and PMOS transistors that have high dielectric constant gate dielectric material over a semiconductor substrate. A metal barrier layer may be formed over the gate dielectric. A workfunction setting metal layer is formed over the metal barrier layer and a cap metal layer is formed over the workfunction setting metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.