Suman Datta
191Patents
41h-index
101Co-inventors
89Inventor score
Filing activity: Aug 23, 2002 → Jan 13, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6858478B2 | Tri-gate devices and methods of fabrication | Emerging Cross-Sectional Technologies | 426 | Expired |
| US6909151B2 | Nonplanar device with stress incorporation layer and method of fabrication | Electricity | 187 | Expired |
| US7456476B2 | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication | Electricity | 173 | Expired |
| US7825437B2 | Unity beta ratio tri-gate transistor static random access memory (SRAM) | Electricity | 162 | Active |
| US7268058B2 | Tri-gate transistors and methods to fabricate same | Electricity | 144 | Expired |
| US7170120B2 | Carbon nanotube energy well (CNEW) field effect transistor | Emerging Cross-Sectional Technologies | 136 | Expired |
| US7126199B2 | Multilayer metal gate electrode | Electricity | 132 | Expired |
| US7531393B2 | Non-planar MOS structure with a strained channel region | Electricity | 119 | Active |
| US7358121B2 | Tri-gate devices and methods of fabrication | Emerging Cross-Sectional Technologies | 117 | Expired |
| US7569857B2 | Dual crystal orientation circuit devices on the same substrate | Electricity | 113 | Active |
| US7898041B2 | Block contact architectures for nanoscale channel transistors | Electricity | 101 | Active |
| US7348284B2 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Emerging Cross-Sectional Technologies | 98 | Expired |
| US7241653B2 | Nonplanar device with stress incorporation layer and method of fabrication | Electricity | 97 | Expired |
| US7148548B2 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Electricity | 96 | Expired |
| US7005366B2 | Tri-gate devices and methods of fabrication | Emerging Cross-Sectional Technologies | 86 | Expired |
| US7157378B2 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Electricity | 85 | Expired |
| US7479421B2 | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby | Electricity | 84 | Expired |
| US6974738B2 | Nonplanar device with stress incorporation layer and method of fabrication | Electricity | 82 | Expired |
| US7407847B2 | Stacked multi-gate transistor design and method of fabrication | Electricity | 80 | Active |
| US7820513B2 | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication | Electricity | 69 | Active |
| US7153784B2 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Electricity | 67 | Expired |
| US7494862B2 | Methods for uniform doping of non-planar transistor structures | Electricity | 65 | Active |
| US7390709B2 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Electricity | 62 | Expired |
| US7381608B2 | Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode | Electricity | 61 | Expired |
| US6970373B2 | Method and apparatus for improving stability of a 6T CMOS SRAM cell | Electricity | 59 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.