Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer
US7126797B2 · kind B2 · utility
15Cited by
5References
52Claims
0Family size
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Key dates
| Filing date | Feb 20, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Feb 27, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49034
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the nonmagnetic metal layer overlap with each other, while each of the crystal structures is deformed. The deformations in the crystal structure of the first magnetic sublayer increase the magnetostriction constant, thereby increasing the magnetoelastic effect of the magnetic sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.