Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates

US7128785B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Johannes Kaeppeler · Harsewinkel, DE
• Michael Heuken · Aachen, DE
• Rainer Beccard · Aachen, DE
• Gerhard Karl Strauch · Wiesbaden, DE

Key dates

• Filing date: Oct 14, 2003
• Grant date: Oct 31, 2006
• Expiry date: Nov 8, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/406
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH3, AsH3 or PH3 into the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.