Photoresist polymer and photoresist composition containing the same
US7129023B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | May 9, 2005 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | May 9, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0048
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer comprising a polymerization repeating unit represented by Formula 1 is less sensitive to change in the amount of energy due to its higher active energy than that of a conventional photoresist polymer. As a result, a phenomenon that a pattern of an outer field region that receives a relatively large amount of light becomes too thin is alleviated without additional dummy patterns when pattern is formed, and pattern collapse caused by a high aspect ratio due to high etching resistance is prevented.Formula 1
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