Method for manufacturing semiconductor device
US7129099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Oct 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main body wafer manufacturing process for manufacturing a wafer on which a semiconductor device to be completed as a product is formed and a monitor wafer manufacturing process for manufacturing a wafer on which a monitor element is formed, the processes sharing a monitoring step alone, the main body wafer manufacturing process including a variation reduction step, the monitor wafer manufacturing process including a quality check step and a condition setting step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.