Semiconductor light-emitting device
US7129525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2005 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n-type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer (3) and the active layer (5), and the c-axis in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the c-axis in the active layer (5), are each greater than zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.