Image sensor and method for fabricating the same
US7129532B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2005 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Mar 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
The present invention relates to an image sensor with a microlens and a method for fabricating the same with use of a bump formation process. A method for fabricating an image sensor includes the steps of: forming a passivation layer on a substrate structure provided with a photodiode and other various device elements; forming a microlens on a portion of the passivation layer; forming a microlens passivation layer for protecting the microlens from a subsequent bump formation process on the microlens; forming a pad open region by selectively etching the microlens passivation layer and the passivation layer; and forming a bump in the pad open region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.