Magnetic memory with write inhibit selection and the writing method for same
US7129555B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3268
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.