High voltage semiconductor device utilizing a deep trench structure
US7129559B2 · kind B2 · utility
11Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2004 |
| Grant date | Oct 31, 2006 |
| Priority date | — |
| Expiry date | May 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A semiconductor device includes a substrate having a source, a drain, and a gate between the source and the drain. Both the source and the drain include a first edge, and the gate includes a first portion. A first deep trench structure is situated under the first portion of the gate and proximate to the first edge of the source and the first edge of the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.