Inventor · Baoshan, TW

Yu-Chang Jong

43Patents
7h-index
58Co-inventors
72Inventor score

Filing activity: Sep 17, 2001 → Aug 4, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9590053B2 Methodology and structure for field plate design Electricity 19 Active
US7372083B2 Embedded silicon-controlled rectifier (SCR) for HVPMOS ESD protection Electricity 12 Active
US7129559B2 High voltage semiconductor device utilizing a deep trench structure Electricity 11 Expired
US7808069B2 Robust structure for HVPW Schottky diode Electricity 9 Active
US9954097B2 Methodology and structure for field plate design Electricity 8 Active
US7081662B1 ESD protection device for high voltage Electricity 8 Expired
US8344416B2 Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits Electricity 7 Active
US10636904B2 Methodology and structure for field plate design Electricity 6 Active
US7521741B2 Shielding structures for preventing leakages in high voltage MOS devices Electricity 6 Active
US6943062B2 Contaminant particle removal by optical tweezers Emerging Cross-Sectional Technologies 6 Expired
US6623911B1 Method to form code marks on mask ROM products Electricity 5 Expired
US9666574B1 Semiconductor device structure and manufacturing method thereof Electricity 4 Active
US11164970B2 Contact field plate Electricity 3 Active
US9748361B2 Integrated circuits using guard rings for ESD systems, and methods for forming the integrated circuits Electricity 3 Active
US7482662B2 High voltage semiconductor device utilizing a deep trench structure Electricity 3 Active
US7384802B2 ESD protection device for high voltage Electricity 2 Active
US9634154B1 Schottky diode having a well with peripherial cathod regions and center andoe region Electricity 2 Active
US8004038B2 Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process Electricity 2 Active
US10861946B1 Field plate structure for high voltage device Electricity 2 Active
US10756208B2 Integrated chip and method of forming the same Electricity 2 Active
US11121225B2 Field plate structure to enhance transistor breakdown voltage Electricity 1 Active
US10964810B2 Methodology and structure for field plate design Electricity 1 Active
US8772092B2 Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits Electricity 1 Active
US12426296B2 High-voltage semiconductor devices and methods of formation Electricity 0 Active
US11398467B2 Methods for forming integrated circuit having guard rings Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.