Single crystal silicon ingot having a high arsenic concentration
US7132091B2 · kind B2 · utility
10Cited by
12References
6Claims
0Family size
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Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Sep 27, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.