Polymers and photoresist compositions for short wavelength imaging
US7132214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2001 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Sep 21, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0046
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.