Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material
US7132297B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2003 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | May 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/814
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical connection with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The first metal runners and second metal runners are oriented such that one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias., forming a continuously conductive structure having a generally helical shape. An inductor core is formed by first forming a silicon layer between each one of the plurality of first metal runners. A germanium layer is formed thereover and the structure is anneal…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.