After deposition method of thinning film to reduce pinhole defects
US7132316B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2005 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Feb 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.