Method for treating a semiconductor surface to form a metal-containing layer
US7132360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2004 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Jan 25, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/0272
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.