Semiconductor light-emitting device and method for manufacturing the same
US7132691B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It has a structure in which an active layer (5) that emits light by electric current injection is sandwiched between an n-type cladding layer (4) and a p-type cladding layer (6) made of materials having a larger band gap than the active layer (5), wherein the active layer (5) is made, for example, of CdxZn1−xO (0≦x<1). It is further more preferable if the cladding layers (4), (6) are made, for example, of MgyZn1−yO (0≦y<1). This narrows the band gap of the ZnO materials, and an oxide semiconductor capable of being wet-etched, easy to handle with, and excellent in crystallinity can be used as a material for an active layer or a cladding layer of a semiconductor light emitting device such as a blue light emitting diode or a blue laser diode in which an active layer is sandwiched between cladding layers, so that a blue semiconductor light emitting device being excellent in light emission characteristics can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.