Patent · US Expired

System and method for measuring properties of a semiconductor substrate in a non-destructive way

US7133128B2 · kind B2 · utility

3Cited by

6References

27Claims

0Family size

Assignee

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

Trudo Clarysse · Ekeren, BE
Wilfried Vandervorst · Mechelen, BE

Key dates

Filing date	Jul 16, 2003
Grant date	Nov 7, 2006
Priority date	—
Expiry date	Nov 25, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG01N2021/1719
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

One aspect of the invention discloses a method of determining the dopant profile of doped regions in a semiconductor substrate. A pump laser is used to create excess carriers in this semiconductor substrate. The excess carrier concentration will influence the reflection of a probe laser. From the reflected probe laser not only the bulk components but also the near-surface components are eliminated to only yield the bulk components.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.