Method and system for semiconductor crystal production with temperature management

US7135073B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Michael Heuken · Aachen, DE
• Gert Strauch · Aachen, DE
• Harry Protzmann · Aachen, DE
• Holger Jurgensen · Aachen, DE
• Oliver Schön · Herzogenrath, DE
• Dietmar Schmitz · Berlin, DE

Key dates

• Filing date: Jun 1, 2001
• Grant date: Nov 14, 2006
• Expiry date: Jul 18, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0217
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.