Semiconductor light emitting device and fabrication method thereof
US7135348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Jan 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
Abstract
A semiconductor light emitting device is fabricated by forming a mask having an opening on a substrate, forming a crystal layer having a tilt crystal plane tilted from the principal plane of the substrate by selective growth from the opening of the mask, and forming, on the crystal layer, a first conductive type layer, an active layer, and a second conductive type layer, which extend within planes parallel to the tilt crystal plane, and removing the mask. The semiconductor light emitting device can be fabricated without increasing fabrication steps while suppressing threading dislocations extending from the substrate side and keeping a desirable crystallinity. The semiconductor light emitting device is also advantageous in that since deposition of polycrystal on the mask is eliminated, an electrode can be easily formed, and that the device structure can be finely cut into chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.