Semiconductor wafer dividing method and apparatus
US7135384B2 · kind B2 · utility
23Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Jun 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor element is formed in a semiconductor wafer, and a groove is formed by performing half-cut dicing on the semiconductor wafer along a dicing line. A dicing region of the semiconductor wafer is irradiated with a laser beam to melt or vaporize a cutting streak formed by dicing. An adhesive tape is adhered to the semiconductor element formation surface of the semiconductor wafer, and the other side of the semiconductor element formation surface is ground to at least a depth reaching the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.