Phase change memory with damascene memory element
US7135696B2 · kind B2 · utility
39Cited by
7References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Nov 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
Abstract
A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.