Inventor · Cupertino, CA, US

Yudong Kim

25Patents
8h-index
26Co-inventors
75Inventor score

Filing activity: Jul 12, 1999 → Nov 15, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7534625B2 Phase change memory with damascene memory element Electricity 84 Active
US6265292A Method of fabrication of a novel flash integrated circuit Electricity 47 Expired
US7135696B2 Phase change memory with damascene memory element Electricity 39 Expired
US7259023B2 Forming phase change memory arrays Emerging Cross-Sectional Technologies 13 Expired
US7880123B2 Dual resistance heater for phase change devices and manufacturing method thereof Electricity 11 Active
US7709822B2 Phase change memory and manufacturing method thereof Electricity 10 Active
US7465625B2 Flash memory cell having reduced floating gate to floating gate coupling Electricity 9 Active
US8513576B2 Dual resistance heater for phase change devices and manufacturing method thereof Electricity 9 Active
US8536013B2 Forming phase change memory cells Electricity 6 Active
US8952299B2 Dual resistance heater for phase change devices and manufacturing method thereof Electricity 5 Active
US9704923B1 Dual-layer dielectric in memory device Electricity 5 Active
US7348618B2 Flash memory cell having reduced floating gate to floating gate coupling Electricity 5 Expired
US7374996B2 Structured, electrically-formed floating gate for flash memories Electricity 4 Expired
US10629652B2 Dual-layer dielectric in memory device Electricity 4 Active
US8637342B2 Phase change memory with threshold switch select device Electricity 3 Active
US7973302B2 Forming phase change memory cells Electricity 3 Active
US8026173B2 Semiconductor structure, in particular phase change memory device having a uniform height heater Electricity 2 Active
US7847333B2 Structured, electrically-formed floating gate for flash memories Electricity 2 Active
US8222627B2 Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element Electricity 2 Active
US10048539B2 Method of manufacturing backlight unit of curved display device Emerging Cross-Sectional Technologies 1 Active
US9159915B2 Phase change memory with threshold switch select device Electricity 1 Active
US10134809B2 Dual-layer dielectric in memory device Electricity 1 Active
US9203024B2 Copper compatible chalcogenide phase change memory with adjustable threshold voltage Electricity 0 Active
US10522756B2 Dual resistance heater for phase change memory devices Electricity 0 Active
US10522757B2 Dual resistive-material regions for phase change memory devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.