Semiconductor device
US7135732B2 · kind B2 · utility
8Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2002 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Jun 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.