Semiconductor devices having thermal spacers
US7135747B2 · kind B2 · utility
27Cited by
17References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Apr 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A high power, high frequency semiconductor device has a plurality of unit cells connected in parallel. The unit cells each having a controlling electrode and first and second controlled electrodes. A thermal spacer divides at least one of the unit cells into a first active portion and a second active portion, spaced apart from the first potion by the thermal spacer. The controlling electrode and the first and second controlled electrodes of the unit cell cross over the first thermal spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.