Photodiode array having reduced dead space
US7135750B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Nov 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A photodiode array includes a first photodiode and at least a second photodiode. The first photodiode includes a first active area, a first anti-reflective coating area, and a first residual polysilicon ring. The first anti-reflective coating area and the first residual polysilicon ring are formed asymmetrically over the first active area. The second photodiode includes a second active area, a second anti-reflective coating area, and a second residual polysilicon ring. The second anti-reflective coating area and the second residual polysilicon ring are formed asymmetrically over the second active area. The first anti-reflective coating area is formed over a region of the first active region adjacent to the second photodiode, and the second anti-reflective coating area is formed over a region of the second active region adjacent to the first photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.