Polar Semiconductor, LLC
35Patents
31Active
35Granted
51Portfolio score
Filing activity: Jun 26, 2002 → Jan 5, 2022 · 11 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8044699B1 | Differential high voltage level shifter | Electricity | 44 | Active |
| US8085563B2 | Protection and clamp circuit for power factor correction controller | Emerging Cross-Sectional Technologies | 14 | Active |
| US7071533B1 | Bipolar junction transistor antifuse | Electricity | 11 | Expired |
| US8248040B2 | Time-limiting mode (TLM) for an interleaved power factor correction (PFC) converter | Emerging Cross-Sectional Technologies | 10 | Active |
| US7817391B2 | Over-current protection device for a switched-mode power supply | Electricity | 10 | Active |
| US8476879B2 | Saving energy mode (SEM) for an interleaved power factor correction (PFC) converter | Emerging Cross-Sectional Technologies | 10 | Active |
| US8427069B2 | Current-regulated power supply with soft-start protection | Emerging Cross-Sectional Technologies | 9 | Active |
| US8564155B2 | Multiple output power supply | Electricity | 8 | Active |
| US8248041B2 | Frequency compression for an interleaved power factor correction (PFC) converter | Emerging Cross-Sectional Technologies | 8 | Active |
| US10388783B2 | Floating-shield triple-gate MOSFET | Electricity | 4 | Active |
| US9899343B2 | High voltage tolerant bonding pad structure for trench-based semiconductor devices | Electricity | 4 | Active |
| US8891262B2 | Series switch bridgeless power supply | Emerging Cross-Sectional Technologies | 3 | Active |
| US7135750B1 | Photodiode array having reduced dead space | Electricity | 3 | Expired |
| US9818828B2 | Termination trench structures for high-voltage split-gate MOS devices | Electricity | 2 | Active |
| US7043711B2 | System and method for defining semiconductor device layout parameters | Physics | 1 | Expired |
| US7466004B2 | Diode structure to suppress parasitic current | Electricity | 1 | Active |
| US10153366B2 | LDMOS transistor with lightly-doped annular RESURF periphery | Electricity | 1 | Active |
| US10141440B2 | Drift-region field control of an LDMOS transistor using biased shallow-trench field plates | Electricity | 1 | Active |
| US8385029B2 | Over-current protection device for a switched-mode power supply | Electricity | 1 | Active |
| US8000073B2 | Current-mode under voltage lockout circuit | Electricity | 1 | Active |
| US9818742B2 | Semiconductor device isolation using an aligned diffusion and polysilicon field plate | Electricity | 1 | Active |
| US8994152B2 | Metal shield for integrated circuits | Electricity | 0 | Active |
| US11245006B2 | Trench semiconductor device layout configurations | Electricity | 0 | Active |
| US12142481B2 | Forming passivation stack having etch stop layer | Electricity | 0 | Active |
| US12015079B2 | Transistor with single termination trench having depth more than 10 microns | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.