Forming a dielectric layer using a hydrocarbon-containing precursor

US7138158B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Robert Meagley · Emeryville, US
• Michael Goodner · Hillsboro, US
• Andrew Ott · Hillsboro, US
• Grant Kloster · Lake Oswego, US
• Michael L. McSwiney · Scappoose, US
• Bob Leet · Scottsdale, US

Key dates

• Filing date: Feb 28, 2003
• Grant date: Nov 21, 2006
• Expiry date: Jul 15, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.