Light emitting device

US7138660B2 · kind B2 · utility

Assignees

• TOYODA GOSEI CO., LTD. · JP
• TRIDONIC OPTOELECTRONICS GMBH · AT
• Litec GBR · DE
• LEUCHTSTOFFWERK BREITUNGEN GMBH · DE

Inventors

• Koichi Ota · Chuo, JP
• Atsuo Hirano · Miyoshi, JP
• Akihito Ota · Kita Nagoya, JP
• Stefan Tasch · Fehring, AT
• Peter Pachler · Graz, AT
• Gundula Roth · Levenhagen, DE
• Walter Tews · Greifswald, DE
• Wolfgang Kempfert · Bad Liebenstein, DE
• Detlef Starick · Berlin, DE

Key dates

• Filing date: Mar 24, 2005
• Grant date: Nov 21, 2006
• Expiry date: Mar 24, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B20/00
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The phosphor is made of alkaline earth metal silicate fluorescent material activated with europium.